| Summary: | 博士 === 臺灣大學 === 物理研究所 === 98 === Because of their potential applications in making electronic and opto-electronic devices, low-dimensional semiconductor systems such as nanowires, nanorods and nanotubes have attracted great attention recently. In this thesis we report our studies on the growth and characterization of II-VI semiconductor nanowires and the opto-electronic properties of these nanowires. ZnO/ZnTe core-shell nanowires were successfully fabricated by first growing the ZnO core then ZnTe shell by CVD and MOCVD, respectively. Structure characterization of the core-shell nanowires were carried out by using X-ray diffraction, transmission electron microscope and scanning electron microscope and the core-shell nanowires were found to have good crystalline quality. Optical properties of nanowires were studies by using Raman scattering, confocal laser scanning microscope and the transmission measurements and the results also indicate the nanowires have good optical properties. The nanowire is then made into a single nanowire transistor and its electric properties were studied and the result indicates that it has proper biasing properties and can be use as a functional transistor. In addition to the ZnO/ZnTe system, the ZnO/ZnSe core-shell nanowires were also grown successfully by using the same growth methods. The ZnO/ZnSe nanowires were also found to have good crystal structure and optical properties.
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