Study of the Mo/Si bilayer and CuSi system recording thin films for write-once optical disc

• Main Authors: Sin-Liang Ou, 歐信良
• Other Authors: 郭博成
• Format: Others
• Language: zh-TW
• Published: 2010
• Online Access: http://ndltd.ncl.edu.tw/handle/79347840487913113701

博士 === 臺灣大學 === 材料科學與工程學研究所 === 98 === Recently, the methods to increase data storage of optical disc inclouding of blue laser optical recording, super resolution near field structure, multilayer, multi-level, holographic data storage, etc, and the blue laser optical recording was developed more rapidily than the others. In this study, metal induced crystallization (MIC) mechanism for alloy and bilayer structure of inorganic recording thin films was investigated. The Mo(7 nm)/Si(7 nm) bilayer, CuSi(16 nm), Si(1.5~8 nm)/CuSi(16 nm) bilayer and Ge(1.5~8 nm)/CuSi(16 nm) bilayer recording films were prepared by magnetron sputtering. Thermal analysis shows that the Mo(7 nm)/Si(7 nm) bilayer films have one phase transition step, which temperature is occurred at 250 oC ~450 oC. The CuSi(16 nm) film has one phase transition step, which temperature is occurred 180 oC ~310 oC. The Si(1.5~8 nm)/CuSi(16 nm) bilayer films have two phase transition steps, which temperatures are occurred at 170 oC ~250 oC and 300 oC ~350 oC. The Ge(1.5~8 nm)/CuSi(16 nm) bilayer films have two phase transition steps, which are occurred at 150 oC ~280 oC and 300 oC ~440 oC. The TEM analysis shows that the as-deposited Mo(7 nm)/Si(7 nm) bilayer film is amorphous, and it would transform to the hexagonal MoSi2 phase after annealing at 300 oC for 20 mins. After annealing at 500 oC for 20 mins, it would transform to the hexagonal MoSi2 and cubic Mo3Si coexisting phases. The as-deposited CuSi(16 nm) film has Cu3Si phase, and it would transform to the Cu3Si and cubic Si coexisting phases after annealing at 300 oC for 20 mins. The as-deposited Si(1.5~8 nm)/CuSi(16 nm) bilayer films have Cu3Si phase, and it would transform to the Cu3Si and cubic Si coexisting phases after annealing at 300 oC for 20 mins. The grain size of cubic Si phase increases after annealing at 500 oC for 20 mins, and the hexagonal Si phase would be formed. The as-deposited Ge(1.5~8 nm)/CuSi(16 nm) bilayer films have Cu3Si phase, and it would transform to the Cu3Si, Cu3Ge and cubic Si coexisting phases after annealing at 300 oC for 20 mins. After annealing at 500 oC for 20 mins, it would transform to the Cu3Si, Cu3Ge, cubic Si and cubic Ge coexisting phases, and the amount of cubic Si phase decreases with the increasing of the Ge layer thickness. The dynamic tests show that the jitter value of Mo(7 nm)/Si(7 nm) bilayer film is 6.5% under 1X BD recording situation and 6.8% under 4X BD recording situation. The jitter value of CuSi(16 nm) film is 8.9% under 1X BD recording situation. On the other hand, the jitter values of Si/CuSi bilayer films are 7.5%, 5.2%, and 7.9% under 1X BD recording situation as the Si layer thickness are 1.5 nm, 3 nm, and 6nm, respectively. The jitter values of Ge/CuSi bilayer films are 7.5%, 7.6%, and 11.4% under 1X BD recording situation as the Ge layer thickness are 1.5 nm, 3 nm, and 6nm, respectively.