Rutherford Backscattering and Corresponding Studies on InGaN, ZnO, and InN thin films
碩士 === 臺灣大學 === 光電工程學研究所 === 98 === Rutherford Backscattering Spectrometry (RBS) technology was employed to study the structure of nanometer scale InGaN/GaN grown on ZnO substrate. Through penetrating simulation, Zn diffusion from substrate and interlayer diffusion between InGaN/GaN and GaN/ZnO hav...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/33363822650227230986 |