Electrical and optical properties of rhenium / niobium doped MoS2 layered crystals
碩士 === 國立臺灣海洋大學 === 電機工程學系 === 98 === Single crystals of rhenium-doped MoS2 and niobium-doped MoS2 have been grown by chemical vapor transport method using bromine as a transporting agent. Single crystalline platelets up to 10×10 mm2 surface area and 2~3 mm in thickness were obtained. X-ray diffract...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/88595282050289666787 |
| Summary: | 碩士 === 國立臺灣海洋大學 === 電機工程學系 === 98 === Single crystals of rhenium-doped MoS2 and niobium-doped MoS2 have been grown by chemical vapor transport method using bromine as a transporting agent. Single crystalline platelets up to 10×10 mm2 surface area and 2~3 mm in thickness were obtained. X-ray diffraction patterns show rhombohedral symmetry (3R) for the rhenium-doped MoS2 and hexagonal symmetry (2H) for the niobium-doped MoS2. X-ray photoelectron spectra (XPS) were deployed to determine the concentration of dopant for the as grown Re-doped and Nb-doped MoS2 single crystals. Hall measurements using the van der Pauw technique revealed n-type semiconducting behavior for the Re-doped MoS2 and p-type behavior for the Nb-doped MoS2. Optical absorption measurements show indirect semiconductors for both Re-doped MoS2 and Nb-doped MoS2. Temperature dependences of the excitonic features A and B of the single crystals in the range 15 to 300 K have been obtained using piezoreflectance measurements. Polarized Raman scattering experiments were also performed to study the vibration properties of the samples for both the van der Waals and edge planes.
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