The Effect of Lanthanum (La) Incorporation in Ultra-Thin ZrO2 High-k Gate Dielectrics
碩士 === 國立臺灣師範大學 === 機電科技研究所 === 98 === This study is mainly to investigate the La doping effect on the electrical properties of ultra-thin La-doped ZrO2 (denoted by ZrLaO) films for high-k gate dielectric applications of advanced logic technologies. In this work, ZrLaO films were co-deposited on p-t...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/77966009299506483899 |