| Summary: | 碩士 === 國立臺南大學 === 材料科學系碩士班 === 98 === Copper indium gallium diselenide (CIGS) polycrystalline thin films have been considered as promising absorber material for a high efficiency solar cell. In this research, CIGS quaternary chalcopyrite material are synthesized by a reflux method due to the low cost and mass production. Amine-type organic agents were used as the solvents to synthesize CIGS material. CIGS material were obtained by reacting different precursors in amine-type solvents, such as ethylenediamine (EN), diethylenetriamine (DETA), and oleylamine (OLA) reflux under nitrogen atmosphere with mechanical stirring.
The main object of this work is to investigate synthesis of CIGS by CuSe, InSe, and Ga2Se3. X-ray diffraction (XRD) patterns show that the structure of CIGS from this study is tetragonal chalcopyrite phase. Simultanously, the results of energy dispersive spectrometer analysis (EDS) and X-ray fluorescence analysis (XRF) reveal that the resulted materials are stoichiometry. The SEM images of resulted CIGS powder indicated that the diameter of CIGS powder is approximately 500 nm. TGA shows that the thermal stability of CIGS synthesized by binary compounds is better than that of elemental one or ionic one. UV-visable indicated that the band gap of resulted CIGS increases along with increasing Ga.
Thus, by comparing the present experimental results with other synthesis methods, which need complicated equipment, complex fabricated condition and higher cost, this work results in a simpler, cheaper and less environmental harm method of synthesizing CIGS material.
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