Investigation of current blocking layers with high reflection and current spreading on GaN-based Light Emitting Diodes
碩士 === 國立臺南大學 === 光電工程研究所 === 98 === In this study, in order to improve the current crowding around the p-pad electrode and prevent the emitted light from absorption by the opaque electrode with low reflectivity, different kinds of reflective current blocking layers (CBLs) are designed to be insert...
Main Authors: | Jhao-ying Wu, 伍昭穎 |
---|---|
Other Authors: | Shih-Chang Shei |
Format: | Others |
Language: | zh-TW |
Published: |
2010
|
Online Access: | http://ndltd.ncl.edu.tw/handle/05677216716469353852 |
Similar Items
-
Improved the Current Spreading Ability of GaN-Based Light Emitting Diodes Using Design of Current Blocking Layer
by: Bo-Jiun Hu, et al. -
GaN Blue Light-Emitting Diode and CurrentSpreading Layer of Processing TechnologyStudy
by: jin-cai Lynn, et al.
Published: (2009) -
Current Spreading of GaN Light-Emitting Diodes Using Plasma Treatment
by: Ke-Hao Pan, et al.
Published: (2006) -
Study of Current Blocking Layer on Light Extraction of UV GaN-Based Light-Emitting Diodes
by: Song-Feng Yang, et al.
Published: (2014) -
Improvement of Current Spreading in GaN-based Light Emitting Diode Grown on Nanorods GaN Template
by: Hsiu-Mei Chou, et al.
Published: (2011)