促進細胞生長之CMOS 32 × 32電刺激微電極陣列晶片
碩士 === 國立清華大學 === 電子工程研究所 === 98 === The chip is designed to realize a platform which is an array of gold electrodes that could provide local electrical stimulation of biological cells for enhancing growth. A Class AB buffer with a high output current is utilized as a driver of the interfacial imped...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/yjb83u |
| Summary: | 碩士 === 國立清華大學 === 電子工程研究所 === 98 === The chip is designed to realize a platform which is an array of gold electrodes that could provide local electrical stimulation of biological cells for enhancing growth. A Class AB buffer with a high output current is utilized as a driver of the interfacial impedance between gold electrodes and medium. In order to achieve the measurement in medium and cells culture on the CMOS MEMS chip, we also designed a special package method. Rectangular pulse wave potentials were applied to the electrode at amplitudes of 50mV and 100 mV with a frequency of 100Hz. PC12 cells cultured on an indium-tin oxide (ITO) electrode has been shown to grow longer neurites with an enhanced initial growth rate in the existence of nerve growth factor (NGF) and electrical stimulation, especially at the amplitudes of 100 mV. And the result of Western Blot also implied that electrical stimulation will affect the neurite growth of PC12, because the phosphorylation of ERK1/2 after NGF treatment increased under the treatment of electrical stimulation.
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