Reactive Deposition of Epitaxial Cobalt Disilicide
碩士 === 國立清華大學 === 材料科學工程學系 === 98 === The relatively small lattice mismatch (~ 1.2 %) between CoSi2 and Si and the similarity in crystal structure allow the possibility of growing epitaxial CoSi2 layer on Si. Therefore CoSi2 has a great advantage to be used in semiconductor technology. There are sev...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/30953331759563804551 |