Research structure and strain effect of PBFO/SRO/STO thin films

• Main Authors: Shiang-rong Yeh, 葉向榮
• Other Authors: Hsiung Chou
• Format: Others
• Language: zh-TW
• Published: 2010
• Online Access: http://ndltd.ncl.edu.tw/handle/78640616550979802109

碩士 === 國立中山大學 === 物理學系研究所 === 98 === In recent years, multiferroics was one of the most popular materials and were widely studied by many scientists. Among all we interested the most is BiFeO3, which exist a room temperature ferromagnetic and ferroelectric properties with high ferromagnetic transition temperature Tc that can provide various kind of applications. However, the drawback of the BiFeO3 is difficult to synthesize the pure phase and to eliminate the leakage of the current. According to others’ reports, with a proper doping can reduce the evaporation of Bi atoms and stabilize the crystal structure. Therefore, we choose Pb as the mixed elements and wish to reduce the unstable oxygen vacancies around the Bi atoms and to increase the dielectric property of Bi1-xPbxFeO3. In our experiment, SrRuO3 is chosen as the buffer layer material, which can grow as a strain relaxed film on the substrate. It is found that the strain relaxation transforms the SrRuO3 crystal structure to a nearly cubic one which has a lattice matching with Bi1-xPbxFeO3. As a result of this, we might improve the leakage problems of Bi1-xPbxFeO3.