Electrical transport study of graphene
碩士 === 國立中山大學 === 物理學系研究所 === 98 === Graphene became a popular material as it has been prepared in University of Manchester since 2004. In our job, we heat SiC in order to decompose silicon on the Si-surface of SiC. We used LEED and AUGER technique in order to check the quality of graphene sample. F...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/38406999116256752910 |
| Summary: | 碩士 === 國立中山大學 === 物理學系研究所 === 98 === Graphene became a popular material as it has been prepared in University of Manchester since 2004. In our job, we heat SiC in order to decompose silicon on the Si-surface of SiC. We used LEED and AUGER technique in order to check the quality of graphene sample. First we observed the (6root3 x 6root3)R30 reconstruction on the surface of our sample and then
we found Carbon peak in AUGER spectrum. After that, we measure R-T and Hall effect by PPMS to do the further research of the electronic transport in graphene/SiC system, in this part of work we tried to analyse the R-T result by hopping theory and calculate Hall mobility and carrier concentration from Hall effect result. In the conclusion we found the active energy is totally different while the process of preparation is changed.
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