| Summary: | 碩士 === 高雄師範大學 === 物理學系 === 98 === Study of Solar Cells Based on Ge and GaAs Materials
Jhih-Syuan Sheng* Jung-Hui Tsai**
Department of Physics, National Kaohsiung Normal University, Kaohsiung, Taiwan, R.O.C
Abstract
In this thesis, we simulated and analyze two kinds of homojunction solar cells based on Ge and GaAs materials by the SILVACO simulation program.
First, we consider the characteristics of Ge homojunction solar cells with different emitter concentrations. η increases from 5.48 % to 8.64 % when the concentration is increased from 2 x 1016 to 2 x 1019 cm-3 and become saturated at 9.26 % as the concentration is larger than that of 2 x 1021 cm-3. Another, as seen from the relationship between conversion efficiency η and emitter thickness, η increase form 7.86% to 9.28% when the emitter thickness is increased from 200 to 15000 Å.
In chapter 3, we analyze the characteristics of GaAs homojunction solar cells with different emitter concentrations. η value decreases from 15.01 % to 8.91 % as the concentration is increased from 2 x 1018 to 2 x 1022 cm-3. It is clear that Isc decreases with increasing emitter doping concentration and minority carrier lifetime becomes shorter, lead to η decreases quickly. On the other hand, for considering the effect of emitter thickness for GaAs solar cells, the conversion efficiency decreases form 15.05 % to 8.58 % as emitter thickness is increased from 500 to 15000 Å. This result can be attributed that the relatively small diffusion length of minority carriers in GaAs layers, resulting in the large amount of recombination in neutral-emitter region.
* Author
** Advisor
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