Analysis of the Piezoelectric Properties of PZT Thin films due to the thickness of sol-gel derived LSMO buffer layer Using Micro-vibration Devices

• Main Authors: Jyong-Shun Huang, 黃炯舜
• Other Authors: Jyh-Cheng Yu
• Format: Others
• Language: zh-TW
• Published: 2010
• Online Access: http://ndltd.ncl.edu.tw/handle/30452047666469750737

碩士 === 國立高雄第一科技大學 === 機械與自動化工程所 === 98 === This study investigated the applications of Sol-Gel derived lead zirconate titanate (PZT) piezoelectric thin film and lanthanum strontium manganese oxide (LSMO) buffer layer. The influence of the LSMO films for the PZT thin film properties was analyzed to investigate the optimal thickness of the oxide buffer layer for the PZT film. Finally, a micro-vibrating device fabricated using MEMS technologies is proposed to assess the properties of the piezoelectric film. The study shows that the resistivity of the sol-gel derived LSMO film is inversely proportional to the thickness of LSMO film. The resistivity of LSMO is saturated when the thickness exceeds 800 nm, and the minimum resistance of the LSMO thin film is 4.10x10-4 Ω with the thickness of 600 nm. The optimal remanent polarization for the PZT with the LSMO thickness of 600 nm is 27.77μC/cm2. On the other hand, the deterioration of the remanent polarization of PZT decreased with increase of LSMO thickness in the 105-cycle fatigue test. The study designed a micro-vibrating structure, and silicon thin film supported its seismic mass. The conversion device of piezoelectric film is set on the four sides of silicon thin film to evaluating the piezoelectric property. The modeling sensitivity of the component is about 0.018mV/g, and the estimated sensitivity of the fabricated device is about 0.01mV/g, which shows the feasibility to use the vibrating device to analyze the piezoelectric characters of PZT films.