Characteristics of Waveguide Photodiode with Graded Index Separate Confinement Heterostucture
碩士 === 國立高雄海洋科技大學 === 微電子工程研究所 === 98 === In this thesis, the designed epitaxial material of InGaAsP with graded energy band gaps and refractive indexes through the modulated composition, is symmetrically inserted between the InP material and InGaAs absorption layer in photodiode epitaxial structure...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/61361018798811163916 |
| Summary: | 碩士 === 國立高雄海洋科技大學 === 微電子工程研究所 === 98 === In this thesis, the designed epitaxial material of InGaAsP with graded energy band gaps and refractive indexes through the modulated composition, is symmetrically inserted between the InP material and InGaAs absorption layer in photodiode epitaxial structure. The designed Waveguide Photodiode (WGPD) and Surface-Coupled Photodiode (SCPD), with absorption layer (InGaAs) sandwiched symmetrically between GRaded INdex Separate Confinement Heterostructures (GRINSCH) have compared to traditional Single Step Double Heterojunction (SSDH) and Double-Step Double Heterojunction (DSDH) photodiodes. The designed GRINSCH layer will smooth out the discontinuity of the energy band and further increase the responsivity of the device. At approximate zero-biased, the incident light could hence be collected effectively in absorption layer through the additional total internal reflection in GRINSCH WGPD. Additionally, the thickness of GRINSCH in photodiode are also investigated to obtain the optimization responsivity and opto-electrical characteristics.
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