Study of the ZnO thin films by DC magnetron sputtering

• Main Authors: Hsiang-Yin Kuo, 郭湘吟
• Other Authors: Yi-Jia Chen
• Format: Others
• Language: zh-TW
• Published: 2010
• Online Access: http://ndltd.ncl.edu.tw/handle/67693349171312325418

碩士 === 國立東華大學 === 材料科學與工程學系 === 98 === We prepared ZnO thin films by arsenic/gallium co-doping using DC magnetron sputtering. The effects of the Ar gas flow, DC power, Ar/O2 gas ratio, and annealing on the structural and optical properties of ZnO films will be investigated. A magnetron is used in order to increase the plasma density near the target, which allows high deposition rates and films density improvement. On the other hand, the utilization of a magnetron sputtering technique leads to spatial non homogeneity. Experimental results indicated that the quality, morphology and XPS analysis have been significantly improved after rapid thermal annealing. These measurements show that the resistivities of the layers are strongly influenced by the position of the racetrack. The thin films could get over than 90% transmittance from the near UV region, and the absorption edge blue shift with the increase of oxygen content. Recent literatures reported that the p-type ZnO would be associated with AsZn –2VZn. As our previous studies proposed, the complex defect accompanies the presence of XPS As3d peak at 48eV, while the main peak at 45eV shifts towards high binding energy. In this sturdy, we found that As3d main peak shift correlate strongly with the plasma distribution. The un-uniform distribution of plasma causes the un-uniform distribution of dopant concentration and residual energy, thus the As signal does not necessarily follows the progressive trend with substrate position. However, this does not affect the association between p-type and As3d signal. We are still having p-type ZnO, with the main peak around 45eV that shifts towards high binding energy.