| Summary: | 碩士 === 國立東華大學 === 光電工程研究所 === 98 === This thesis is divided into two parts, simulation of solar cell and process of graphene. We used PC1D (provided by the University of New South Wales) to simulate single crystal silicon solar cell. With the traditional n+-p junction solar cell, we changed the emitter doping concentration to investigate the corresponding efficiencies. Then, we added the back surface field. We changed the doping concentration of back surface field to investigate the corresponding efficiency. We also changed the light incident region (n+ region and p+ region), and changed the back surface field doping concentration. We compared the advantages and disadvantages of the illumination region. Finally, we changed the diffusion length of solar cells.
On the other hand, we briefly introduced graphene. We presented varies formation processes of graphene with a brief introduction and comparison. This paper used chemical dispersion method to fabricate graphene film. Then we used atomic force microscope to observe the surface morphology. Finally, we annealed the sample in high vacuum and high temperature. After annealing the sample, we measured the I-V characteristics of graphene. Eventually, we hope graphene to be able to apply to the transparent conductive film for solar cell manufacturing process.
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