| Summary: | 碩士 === 國立嘉義大學 === 光電暨固態電子研究所 === 98 === In this study, a “Aurora” Pulsed laser deposition (PLD) method is used to prepare the Gallium-doped ZnO (GZO) thin films. When the GZO thin films were deposited by a “Aurora” PLD, the different magnitude of magnetic field was applied at the target side. The interaction between the particles in the PLD plume will be enhanced by applied magnetic field. It can improve the characteristics of GZO thin films by an enhanced ionization of the ablated particles during transport from the target to substrate. GZO thin films have been deposited on glass substrates with various magnetic fields. The composition, structural, electrical and optical properties were performed by XPS, XRD, AFM, Hall-Effect, CAFM, Ellipsometer and UV-VIS spectrum measurements. The effects of the various magnetic fields on the composition, structural, electrical and optical properties of GZO thin films have been discussed.
The dopant concentration of GZO target and all of PLD processes were controlled in the same conditions. We can prepare the different dopant concentrations of GZO thin films by various applied magnetic fields. When the magnetic field is increased in PLD, it shows that the carrier concentration, conductivity and mobility of GZO thin films will be increased. The GZO thin films exhibited the lowest resistivity value of 4.624×10-4 Ω-cm with about 1200 Oe of magnetic field. Under various strengths of magnetic filed in PLD, all GZO thin films show over 80% optical transmission in the visible range. XRD indicates that the magnitude of peak (103) is stronger than the one of peak (002). If the magnitude of peak (103) is stronger, the conductivity of GZO thin films will be enhanced.
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