探討最後一個量子井井障厚度對紫光與藍光氮化銦鎵發光二極體發光性能之影響

• Main Author: 張淑貞
• Other Authors: 郭艷光
• Format: Others
• Language: zh-TW
• Published: 2010
• Online Access: http://ndltd.ncl.edu.tw/handle/06625861300117646167

碩士 === 國立彰化師範大學 === 光電科技研究所 === 98 === In this thesis, optical performance of InGaN light-emitting diodes with varied thicknesses in the last barrier is systematically investigated by using the APSYS simulation program. Specifically, the analyses focus on light output power, carrier distribution in quantum wells, recombination rate, and electron overflow of the studied structures. The simulation results show that great improvement was reported in the optical properties of the violet InGaN light-emitting diode of which the last barrier is thinner. The improvement is based on the fact that use of a thinner last-barrier is beneficial for increasing the hole injection efficiency and the probability of electron transporting back into the quantum well. When the amount of holes injected into the active region increases, the light-emitting diode would reduce the amount of electrons leaking from the active region to the p-side layers. Accordingly, the radiative recombination and output power of the light-emitting diode are enhanced when the thinner last barrier is utilized. In chapter 1, the literatures and papers related to the concept of hole distribution in active region are introduced and the methods of producing white light-emitting diodes are also described. In chapter 2, structures of the violet and blue light-emitting diodes under study as well as the physical parameters used in the APSYS simulation program are introduced. In chapter 3, the violet InGaN light-emitting diodes with varied thicknesses in the last barrier are investigated. The band diagrams, electron and hole distributions in th active region, and radiative recombination rate are analyzed and compared. In chapter 4, the blue InGaN light-emitting diodes with varied thicknesses in the last barrier are investigated. The band diagrams, electron and hole distributions in th active region, and radiative recombination rate are analyzed and compared. Finally, a summary to the previous studies is provided in chapter 5.