Simulation of High Electron Concentration Channel Field-Effect Transistors

Simulation of High Electron Concentration Channel Field-Effect Transistors

碩士 === 國立彰化師範大學 === 電子工程學系 === 98 === The purpose of this thesis is to simulate the high electron density channel field-effect transistor (FET). Based on the high electron mobility transistor (HEMT) with a high electron concentration InAsSb channel, we simulate the influences of the antimony (Sb) co...

Full description

Bibliographic Details
Main Authors:	Hung-Kui Lai, 賴宏奎
Other Authors:	Jenq-Shinn Wu
Format:	Others
Language:	zh-TW
Published:	2010
Online Access:	http://ndltd.ncl.edu.tw/handle/29112212121772608336

Similar Items

The Simulation and Analysis on High Electron Mobility Transistors and Silicon-on-Insulation Field Effect TransistorsThe Simulation and Analysis on High Electron Mobility Transistors and Silicon-on-Insulation Field Effect Transistors
by: Yu-Chieh Chen, et al.
Published: (2006)

Simulation of Graphene Channel Field-Effect Transistors
by: I-Heng Chou, et al.
Published: (2010)

Analytic Modeling for Device Characteristics of Doped-Channel Field-Effect Transistors and High Electron Mobility Transistors
by: Ching-Sung Lee, et al.
Published: (2002)

Simulation and Analysis for Dual-channel and Composite-channel High Electron Mobility Transistors
by: Tsung-Hsing Lu, et al.
Published: (2008)

Analysis and simulation of the high electron mobility field effect transistors (HEMT
by: LIU, TANG-JIE, et al.
Published: (1988)

Investigation of AlInAs/GaInAs High Electron Mobility and Doped-Channel Field-Effect Transistors
by: Ning-Xing Su, et al.
Published: (2009)

Fabrication of Heterostructure Field-Effect Transistors (HFETs) with InGaAs Channels
by: Po-Hsien Lai, et al.
Published: (2004)

Simulation and Design of Short-Channel Tunnel Field-Effect Transistors
by: Yu-Hsuan Chen, et al.
Published: (2015)

The Application of TiO2 on High-Electron-Mobility Transistor
by: Chenq-Hung Lai, et al.
Published: (2015)

Simulation and Electrical Characteristics of FerroelectricNegative Capacitance Field Effect Transistors
by: Der-Chuan Lai, et al.
Published: (2015)

High Mobility Strained-Ge Channel Field Effect Transistor
by: Pei-Ling Wang, et al.
Published: (2005)

Analysis and simulation of two-dimensional electron gas field effect transistors
by: CHEN, DE-FANG, et al.
Published: (1989)

Fabrication and Characterization of AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Field Effect Transistors
by: Jui-Hung Hung, et al.
Published: (2013)

Characterization of Graphene Field-Effect Transistors for High Performance Electronics
by: Meric, Inanc
Published: (2011)

Tunnel Field-Effect Transistor With Segmented Channel
by: Jaesoo Park, et al.
Published: (2019-01-01)

Quantum-Doped Graded-Like Channel Heterostructure Field Effect Transistor with High Device Linearity
by: Hung, Ling-Tse, et al.
Published: (1997)

Modeling and Simulation of GeSn-based Field Effect Transistors
by: Jen-HongLiao, et al.
Published: (2016)

Electron irradiation of n channel silicon on sapphire Insulated Gate Field Effect Transistors (IGFET).
by: Pornaras, Robert A.
Published: (2012)

Simulation Study of the Double-Gate Tunnel Field-Effect Transistor with Step Channel Thickness
by: Maolin Zhang, et al.
Published: (2020-06-01)

Efficiency improvement of MoS2 field-effect transistors by using high channel electric field
by: Chang, Chin-Chia, et al.
Published: (2016)

Possible high Tc superconductivity in the doped channel of a field effect transistor
by: M. Sahraoui-Tahar
Published: (2019-08-01)

Heterojunction Tunnel Field-Effect Transistors with Composite Channel
by: Chun-Wei Lin, et al.
Published: (2017)

Short channel V groove field effect transistor
by: SONG, HONG-ZHENG, et al.
Published: (1989)

Fabrication and characterisation of the Heterojunction field effect transistor (HFET) and the bipolar inversion channel field effect transistor (BIFCET)
by: Lebby, M. S.
Published: (1987)

2D Electronics Based on Graphene Field Effect Transistors: Tutorial for Modelling and Simulation
by: Bassem Jmai, et al.
Published: (2021-08-01)

A Study of Doped-channel Field-effect Transistor
by: Jiang-Tong Liang, et al.
Published: (1994)

Investigation and Logic Application of InGaP/InGaAsDoped-Channel High Electron MobilityField-Effect Transistors
by: Tzu-Yen Weng, et al.
Published: (2007)

Measurement of Channel Temperature in GaN High-Electron Mobility Transistors
by: Joh, Jungwoo, et al.
Published: (2010)

Simulation of Graphene Field-Effect Transistor Biosensors for Bacterial Detection
by: Guangfu Wu, et al.
Published: (2018-05-01)

Contact Resistance and Channel Conductance of Graphene Field-Effect Transistors under Low-Energy Electron Irradiation
by: Filippo Giubileo, et al.
Published: (2016-11-01)

Investigation of the Influence of Gate Recess and Fin Structurein the Field-Effect Transistors and the High Frequency Response in the High-electron-mobility Transistors
by: Tzu-Kuan Wu, et al.
Published: (2015)

Investigation of -V Compound Semiconductor High Electron Mobility Field-Effect Transistors
by: Li-YangChen, et al.
Published: (2010)

RADIATION EFFECTS ON VERTICAL CHANNEL JUNCTION FIELD EFFECT TRANSISTORS.
by: Edwards, William Robert.
Published: (1982)

Improved Graphene-based Hot Electron Transistor for High Frequency Applications
by: Hung-Yu Lin, et al.
Published: (2019)

Simulation of 80-nm Symmetric with Asymmetric n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors and Poly-Si Nanowire Transistors
by: Yan-Yu Pan, et al.
Published: (2011)

Simulation for the high frequency high electron mobility transistor (HEMT) design
by: 林以寬
Published: (2014)

Simulation of Impact Ionization Effect in InSb High Electron Mobility Transistors
by: T.H.HSIEH, et al.
Published: (2014)

Investigation of High-Barrier-Gate and Multiple-Channel Structure Heterojunction Field-Effect Transistors
by: Yung-Hsin Shie, et al.
Published: (1999)

The Dependence of the High-Frequency Performance of Graphene Field-Effect Transistors on Channel Transport Properties
by: Muhammad Asad, et al.
Published: (2020-01-01)

The simulation of GaAs High Electron Mobility Transistor using TCAD
by: WU,SHU-HSUAN, et al.
Published: (2008)

Cannot write session to /tmp/vufind_sessions/sess_tpr5b58o5767ku8mikhnqtrh60