Simulation of High Electron Concentration Channel Field-Effect Transistors

碩士 === 國立彰化師範大學 === 電子工程學系 === 98 === The purpose of this thesis is to simulate the high electron density channel field-effect transistor (FET). Based on the high electron mobility transistor (HEMT) with a high electron concentration InAsSb channel, we simulate the influences of the antimony (Sb) co...

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Main Authors:	Hung-Kui Lai, 賴宏奎
Other Authors:	Jenq-Shinn Wu
Format:	Others
Language:	zh-TW
Published:	2010
Online Access:	http://ndltd.ncl.edu.tw/handle/29112212121772608336

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spelling	ndltd-TW-098NCUE54280052015-11-04T04:01:42Z http://ndltd.ncl.edu.tw/handle/29112212121772608336 Simulation of High Electron Concentration Channel Field-Effect Transistors 高電子濃度通道場效電晶體之模擬 Hung-Kui Lai 賴宏奎碩士國立彰化師範大學電子工程學系 98 The purpose of this thesis is to simulate the high electron density channel field-effect transistor (FET). Based on the high electron mobility transistor (HEMT) with a high electron concentration InAsSb channel, we simulate the influences of the antimony (Sb) composition in the channel on the device characteristics. Additionally, we study the FET structure with an Al channel. It’s found that when the thickness of the Al channel is decreased to the scale of several atomic layers, the quantum confinement effect can effectively reduce the electron concentration. Jenq-Shinn Wu 吳正信 2010 學位論文 ; thesis 31 zh-TW
collection	NDLTD
language	zh-TW
format	Others
sources	NDLTD
description	碩士 === 國立彰化師範大學 === 電子工程學系 === 98 === The purpose of this thesis is to simulate the high electron density channel field-effect transistor (FET). Based on the high electron mobility transistor (HEMT) with a high electron concentration InAsSb channel, we simulate the influences of the antimony (Sb) composition in the channel on the device characteristics. Additionally, we study the FET structure with an Al channel. It’s found that when the thickness of the Al channel is decreased to the scale of several atomic layers, the quantum confinement effect can effectively reduce the electron concentration.
author2	Jenq-Shinn Wu
author_facet	Jenq-Shinn Wu Hung-Kui Lai 賴宏奎
author	Hung-Kui Lai 賴宏奎
spellingShingle	Hung-Kui Lai 賴宏奎 Simulation of High Electron Concentration Channel Field-Effect Transistors
author_sort	Hung-Kui Lai
title	Simulation of High Electron Concentration Channel Field-Effect Transistors
title_short	Simulation of High Electron Concentration Channel Field-Effect Transistors
title_full	Simulation of High Electron Concentration Channel Field-Effect Transistors
title_fullStr	Simulation of High Electron Concentration Channel Field-Effect Transistors
title_full_unstemmed	Simulation of High Electron Concentration Channel Field-Effect Transistors
title_sort	simulation of high electron concentration channel field-effect transistors
publishDate	2010
url	http://ndltd.ncl.edu.tw/handle/29112212121772608336
work_keys_str_mv	AT hungkuilai simulationofhighelectronconcentrationchannelfieldeffecttransistors AT làihóngkuí simulationofhighelectronconcentrationchannelfieldeffecttransistors AT hungkuilai gāodiànzinóngdùtōngdàochǎngxiàodiànjīngtǐzhīmónǐ AT làihóngkuí gāodiànzinóngdùtōngdàochǎngxiàodiànjīngtǐzhīmónǐ
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Simulation of High Electron Concentration Channel Field-Effect Transistors

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