Simulation of High Electron Concentration Channel Field-Effect Transistors
碩士 === 國立彰化師範大學 === 電子工程學系 === 98 === The purpose of this thesis is to simulate the high electron density channel field-effect transistor (FET). Based on the high electron mobility transistor (HEMT) with a high electron concentration InAsSb channel, we simulate the influences of the antimony (Sb) co...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/29112212121772608336 |
| Summary: | 碩士 === 國立彰化師範大學 === 電子工程學系 === 98 === The purpose of this thesis is to simulate the high electron density channel field-effect transistor (FET). Based on the high electron mobility transistor (HEMT) with a high electron concentration InAsSb channel, we simulate the influences of the antimony (Sb) composition in the channel on the device characteristics. Additionally, we study the FET structure with an Al channel. It’s found that when the thickness of the Al channel is decreased to the scale of several atomic layers, the quantum confinement effect can effectively reduce the electron concentration.
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