Growth of In-rich InGaN Films by Molecular Beam Epitaxy
碩士 === 國立彰化師範大學 === 電子工程學系 === 98 === In-rich InGaN thin films are grown directly on GaN templates by plasma assisted molecular beam epitaxy. In the first part of study, In0.8Ga0.2N films are grown at 525、550 and 575℃ to explore the influence of growth temperatures. When the growth temperature is ra...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/93258247238874974399 |