| Summary: | 碩士 === 國立彰化師範大學 === 電子工程學系 === 98 === In-rich InGaN thin films are grown directly on GaN templates by plasma assisted molecular beam epitaxy. In the first part of study, In0.8Ga0.2N films are grown at 525、550 and 575℃ to explore the influence of growth temperatures. When the growth temperature is raised from 525 to 550 ℃, the surface root mean square roughness measured by atomic force microscopy decreases from 2.63 nm to 0.8 nm and full width at half maximum (FWHM) of the photoluminescence peak at 14K also decreases from 80.60 meV to 47.71 meV. Both results indicate improvement in films quality. In the second part of study, InXGa1-XN films with In contents X ranging from 0.6~0.9 are grown at 525 ℃. Phase separation is enhanced by increasing In content, as evidenced by ω-2θ X-ray diffraction scan results, and the FWHM of (10-12) rocking curve decreases. The strain relation between InGaN films and GaN templates and the In composition are simultaneously analyzed using reciprocal space mapping (RSM).
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