| Summary: | 碩士 === 國立彰化師範大學 === 物理學系 === 98 === There are some advantages of Sol - gel process as no vacuum, low cost, suitable for large area coating, and can form films with high homogeneity. So we use this process to prepare the transparent conductive oxide, and used for thin film crystal active layer.
Experiment was divided into two parts, the first part of the lithium-doped ZnO thin film transistors, making completion of the surface morphology of thin film doped with changes in the optical energy gap; transistor part of the change on the environment, as well as doped the impact of debris, and look forward to make zinc oxide doped lithium to find the best P-type semiconductor and the doping conditions. The second part is doped lithium indium zinc oxide thin film transistors, the same type of surface, optical energy gap changes and component changes in the environment, and the dopant effect, and find the best conditions for doping.
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