Effects of In content on optical and electrical properties of InxZn1-xO films

• Main Author: 曾建洲
• Other Authors: 林祐仲
• Format: Others
• Language: zh-TW
• Published: 2010
• Online Access: http://ndltd.ncl.edu.tw/handle/86012054380282283047

碩士 === 國立彰化師範大學 === 物理學系 === 98 === This study aims to explore the effect of indium content on the electrical and optical properties of indium doping zinc oxide (InxZn1-xO)thin films by sol-gel method. The molar ratio of indium and zinc was 0.02, 0.04, 0.08 and 0.16. The experiment first observed crystalline quality of InxZn1-xO thin film by Raman spectroscopy and X-ray diffraction, and then used photoluminescence spectroscopy to decide the defect types. Next, elemental composition and chemical bonding of InxZn1-xO thin films were measured by X-ray photoelectron spectroscopy.The sample surface was later observed by the scanning electron microscopy and measured work function by Kelvin probe. Finally, the optical properties of InxZn1-xO were measured by ultraviolet-visible spectrometer. The results showed that the increase of indium content could cause the deterioration of crystal quality. In addition, the defects such as acceptor defects and donor defects became more productive. One source of the carrier is charge compensation among acceptor defects,donor defects and indium ions replace zinc ions. Keywords：ZnO, IZO, Doping, TCO, Charge compensation