Research on the applications of negative charge material in silicon solar cells
碩士 === 國立中央大學 === 光電科學研究所 === 98 === The researches on the environment friendly and energy saving technologies have been more and more important nowadays. Among creating recycled energy, solar cell is especially an important topic in many developed countries. However, the low conversion efficiency i...
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ndltd-TW-098NCU056140462016-04-20T04:18:00Z http://ndltd.ncl.edu.tw/handle/85210237695536769530 Research on the applications of negative charge material in silicon solar cells 負電荷介質材料在矽晶太陽電池之研究 Chun-Che Hsu 許俊哲 碩士 國立中央大學 光電科學研究所 98 The researches on the environment friendly and energy saving technologies have been more and more important nowadays. Among creating recycled energy, solar cell is especially an important topic in many developed countries. However, the low conversion efficiency is still an existing problem in silicon solar cells. One of the important reasons is from the internal defect of silicon material. To silicon wafer based solar cells, the surface defect is especially the principle part among the entire defect. Therefore, our research focused on fabricating passivation layer of negative charge on silicon wafer based solar cell. We expected to apply this kind of passivation layer for achieving high efficiency silicon solar cells. By applying the negative charge material on the surface of silicon solar cells, the recombination effect of free carriers occurring near the surface of solar cells can be reduced. Especially to the p type silicon solar cells, this surface passivation layer can effectively improve possibility of carrier transportation and increase the final conversion efficiency of solar cells. In general, surface passivation technique is becoming more and more important due to the thinner thickness of solar cells are also developed recently. Some one proposed that the material usage of Al2O3 and AlOxNy would have better performance in passivated surface of solar cells than conventional materials. Therefore, these kinds of materials have widespread application on surface of highly doping p type silicon wafer because that these have lots of negative charge which forms surface field-effect to improve the outcome of surface passivation. Besides, these materials also have high transparency from the spectrum range of visible to infrared wavelength. In another hand, AlOxNy material exist larger negative charge than Al2O3 material. Therefore, we choose this material of AlOxNy for fabricating the silicon solar cells. Cheng-Chung Lee Sheng-Hui Chen 李正中 陳昇暉 2010 學位論文 ; thesis 104 zh-TW |
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碩士 === 國立中央大學 === 光電科學研究所 === 98 === The researches on the environment friendly and energy saving technologies have been more and more important nowadays. Among creating recycled energy, solar cell is especially an important topic in many developed countries. However, the low conversion efficiency is still an existing problem in silicon solar cells. One of the important reasons is from the internal defect of silicon material. To silicon wafer based solar cells, the surface defect is especially the principle part among the entire defect. Therefore, our research focused on fabricating passivation layer of negative charge on silicon wafer based solar cell. We expected to apply this kind of passivation layer for achieving high efficiency silicon solar cells.
By applying the negative charge material on the surface of silicon solar cells, the recombination effect of free carriers occurring near the surface of solar cells can be reduced. Especially to the p type silicon solar cells, this surface passivation layer can effectively improve possibility of carrier transportation and increase the final conversion efficiency of solar cells. In general, surface passivation technique is becoming more and more important due to the thinner thickness of solar cells are also developed recently. Some one proposed that the material usage of Al2O3 and AlOxNy would have better performance in passivated surface of solar cells than conventional materials. Therefore, these kinds of materials have widespread application on surface of highly doping p type silicon wafer because that these have lots of negative charge which forms surface field-effect to improve the outcome of surface passivation. Besides, these materials also have high transparency from the spectrum range of visible to infrared wavelength. In another hand, AlOxNy material exist larger negative charge than Al2O3 material. Therefore, we choose this material of AlOxNy for fabricating the silicon solar cells.
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Cheng-Chung Lee |
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Cheng-Chung Lee Chun-Che Hsu 許俊哲 |
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Chun-Che Hsu 許俊哲 |
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Chun-Che Hsu 許俊哲 Research on the applications of negative charge material in silicon solar cells |
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Chun-Che Hsu |
title |
Research on the applications of negative charge material in silicon solar cells |
title_short |
Research on the applications of negative charge material in silicon solar cells |
title_full |
Research on the applications of negative charge material in silicon solar cells |
title_fullStr |
Research on the applications of negative charge material in silicon solar cells |
title_full_unstemmed |
Research on the applications of negative charge material in silicon solar cells |
title_sort |
research on the applications of negative charge material in silicon solar cells |
publishDate |
2010 |
url |
http://ndltd.ncl.edu.tw/handle/85210237695536769530 |
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