Development of InGaSb/AlSb High Hole Mobility HFET
碩士 === 國立中央大學 === 電機工程研究所 === 98 === Sb-based materials are considered to be high potential for high-speed logic and digital electronics due to their highest electron and hole mobilities among all III-V compounds. Added by their low-power consumption, complementary circuit devices can thus be realiz...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/01442453999069630430 |