Studies of CIGS solar cells with In2Se3 buffer layer
碩士 === 國立中央大學 === 電機工程研究所 === 98 === In this study, we investigate the impact of In2Se3 buffer of CIGS solar cells which was used to replace the CdS buffer to avoid the toxic issue. The structure of the CIGS solar cells is Mo/CIGS/In2Se3/ZnO/ZnO:Al/Ni/Al. The metal contact Ni/Al was deposited by ele...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/98216028585200216700 |
| Summary: | 碩士 === 國立中央大學 === 電機工程研究所 === 98 === In this study, we investigate the impact of In2Se3 buffer of CIGS solar cells which was used to replace the CdS buffer to avoid the toxic issue.
The structure of the CIGS solar cells is Mo/CIGS/In2Se3/ZnO/ZnO:Al/Ni/Al. The metal contact Ni/Al was deposited by electron beam evaporator. The other films were deposited by RF-sputtering.
Our group has successfully fabricated the CIGS solar cells with In2Se3 buffer layer. The RF power was kept at 100 W to deposit the back contact Mo for 30 minutes and the substrate temperature was 100 ℃.The RF power was kept at 50 W to deposit the absorption layer CIGS for 35 minutes. The RF power was kept at 70 W to deposit the buffer layer In2Se3 for 3 minutes. The RF power was kept at 50 W to deposit the transparent conducting ZnO film for 15 minutes. The RF power was kept at 50 W to deposit the transparent conducting ZnO:Al for 30 minutes. The fabricated cell of 0.021 cm2 active area demonstrates an efficiency of 0.235 % with VOC = 280 mV, JSC = 2 mA/cm2, FF = 41 % under AM 1.5 illumination.
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