Gas and Liquid Sensors based on AlGaN/GaN High Electron Mobility Transistor
博士 === 國立中央大學 === 物理研究所 === 98 === In this thesis, we study gas and liquid sensors based on AlGaN/GaN high electron mobility transistor. For gas sensor, AlGaN/GaN high electron mobility transistors (HEMTs) with a polarized polyvinylidene difluoride (PVDF) film coated on the gate area exhibited sign...
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| Format: | Others |
| Language: | en_US |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/98701702288735669832 |