Blistering in InP/InGaAs/InP p-i-n strucrure via hydrogen diffusion by atmospheric pressure plasma for Ion-Cut process

碩士 === 國立中央大學 === 材料科學與工程研究所 === 98 === Integration of InP-based materials with Si substrates has been investigated extensively in order to achieve a high performance and reduce the cost in recent years. The lattice mismatch leads the defects to appear near the interface between dissimilar materials...

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Bibliographic Details
Main Authors: Hsu-sheng Tsai, 蔡勖升
Other Authors: Tien-hsi Lee
Format: Others
Language:en_US
Published: 2010
Online Access:http://ndltd.ncl.edu.tw/handle/81105452450800836459