By different method to prepareing AZO thin film

• Main Authors: Jia-sian Lai, 賴家賢
• Other Authors: Anthony S. T.Chiang
• Format: Others
• Language: zh-TW
• Published: 2010
• Online Access: http://ndltd.ncl.edu.tw/handle/70790696680213653323

碩士 === 國立中央大學 === 化學工程與材料工程研究所 === 98 === Previously, our laboratory successfully synthesized highly concentration AZO solution. And used this solution to produced a transparent conductive oxide thin film. But this process was too wasted time, we needed repeatedly to Infiltrate the film into AZO solution and annealed at high temperature to burned the organic . so I tried to simplify this process. At first, we used dip-coating method to make a gel film and then used DI-water at 60℃to washed the ethane glycol. After washed the film, which will became a porous structure. And then we could deposited ZnO into the porous by chemical deposition followed by electrochemical growth in 0.1M zinc nitrate aqueous solutions containing 0.1M DMAB at 333 K for 4hr to filled the porous. After filled the porous, we will anneal at 500℃ for 2hr to burned out the organic. And then annealed at 300~500℃ under a hydrogen atmosphere at 0.3torr pressure for 30min. The increase in annealing temperature gave a decrease in resistivity and an increase in carrier concentration and mobility and grain size. At 500℃ hydrogen annealed, the resistivity of the ZnO:H films achieves 0.04Ωcm and carrer concentration and mobility was 2.18x1019 cm3 and 6.84 cm2 V-1 s-1.It is also found that ZnO film has a scale like surface so it has a high light scattering in the visible range. In addition, we also try to control the AZO solution viscosity and surface tension to make the ink could used at EPSON printer. We success use this ink to printing straight line with width 100μm and a 4x2cm rectangular. After printing, we also use 60℃ DI-water to wash the straight line or the rectangular to make a porous structure. And then we also use electroless deposition process under the 0.1M Zinc nitrate and 0.1M DMAB aqueous solution. We use SEM and 4 point probe to observe the crystal morphology and conductivity. The ZnO crystals are grown in the printing film and it has a rod-type crystal structure. The transparent at 550nm are about 90% and the conductice are 1700 Ωcm