Application of photovoltaic silicon materials in low temperature

碩士 === 國立交通大學 === 顯示科技研究所 === 98 === Flexible, large area circuits exhibit a new form of electronics which have led to rapidly rising and promising applications in displays, sensors, medical devices and other areas. Besides flexible electronics on plastic substrates possess advantageous characterist...

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Main Authors: Jhan, Huang-Yan, 詹皇彥
Other Authors: Huang, Jung Y.
Format: Others
Language:en_US
Published: 2010
Online Access:http://ndltd.ncl.edu.tw/handle/79075822299312560681
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spelling ndltd-TW-098NCTU58121402016-04-18T04:21:48Z http://ndltd.ncl.edu.tw/handle/79075822299312560681 Application of photovoltaic silicon materials in low temperature 矽光伏特材料於低溫薄膜電晶體之應用 Jhan, Huang-Yan 詹皇彥 碩士 國立交通大學 顯示科技研究所 98 Flexible, large area circuits exhibit a new form of electronics which have led to rapidly rising and promising applications in displays, sensors, medical devices and other areas. Besides flexible electronics on plastic substrates possess advantageous characteristics, being lightweight, flexible, and have the capacity to be manufactured in a variety of shapes, which leads to freedom of design. Currently, a-Si:H TFTs are used in AMLCD and compatible with flexible substrate due to low temperature process. However, low device mobility, higher drive voltage and electrical instability are the main disadvantages of a-Si TFT. Recent developments reveal that micro- or nanocrystalline silicon is a promising alternative for flexible display and largearea electronic applications. The charge carrier mobility exceeds the mobility of amorphous silicon significantly and compatible with flexible substrate. In this thesis, a high quality and low resistivity of intrinsic and n-type microcrystalline silicon films were developed at low temperature 200oC by High Density Plasma chemical vapor deposition system and Hot-Wire chemical vapor deposition system. First μc-Si:H film was analyzed by XRD and SEM. And the μc-Si:H with a grain sizes of ~50-100 nm was recognized. The grain size is the same with conventional SPC(600℃annealing 24hours)method. A self-aligned TFTs was demonstrated. After that, the density of state distribution was extracted from TFTs by FEC method. With these results we can understand the different crystallinity on the effect of defect density distribution. Finally a top-gate microcrystalline TFTs without S/D implantation was demonstrated. A high electron mobility exceeding 50 cm2/V-s, low subthreshold swing 0.1-0.3 V/decade and high current ON/OFF ratios more than 105 was obtained. It shows highly potential in flexible electronics application. Huang, Jung Y. Shieh, Jia-Min 黃中垚 謝嘉民 2010 學位論文 ; thesis 47 en_US
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description 碩士 === 國立交通大學 === 顯示科技研究所 === 98 === Flexible, large area circuits exhibit a new form of electronics which have led to rapidly rising and promising applications in displays, sensors, medical devices and other areas. Besides flexible electronics on plastic substrates possess advantageous characteristics, being lightweight, flexible, and have the capacity to be manufactured in a variety of shapes, which leads to freedom of design. Currently, a-Si:H TFTs are used in AMLCD and compatible with flexible substrate due to low temperature process. However, low device mobility, higher drive voltage and electrical instability are the main disadvantages of a-Si TFT. Recent developments reveal that micro- or nanocrystalline silicon is a promising alternative for flexible display and largearea electronic applications. The charge carrier mobility exceeds the mobility of amorphous silicon significantly and compatible with flexible substrate. In this thesis, a high quality and low resistivity of intrinsic and n-type microcrystalline silicon films were developed at low temperature 200oC by High Density Plasma chemical vapor deposition system and Hot-Wire chemical vapor deposition system. First μc-Si:H film was analyzed by XRD and SEM. And the μc-Si:H with a grain sizes of ~50-100 nm was recognized. The grain size is the same with conventional SPC(600℃annealing 24hours)method. A self-aligned TFTs was demonstrated. After that, the density of state distribution was extracted from TFTs by FEC method. With these results we can understand the different crystallinity on the effect of defect density distribution. Finally a top-gate microcrystalline TFTs without S/D implantation was demonstrated. A high electron mobility exceeding 50 cm2/V-s, low subthreshold swing 0.1-0.3 V/decade and high current ON/OFF ratios more than 105 was obtained. It shows highly potential in flexible electronics application.
author2 Huang, Jung Y.
author_facet Huang, Jung Y.
Jhan, Huang-Yan
詹皇彥
author Jhan, Huang-Yan
詹皇彥
spellingShingle Jhan, Huang-Yan
詹皇彥
Application of photovoltaic silicon materials in low temperature
author_sort Jhan, Huang-Yan
title Application of photovoltaic silicon materials in low temperature
title_short Application of photovoltaic silicon materials in low temperature
title_full Application of photovoltaic silicon materials in low temperature
title_fullStr Application of photovoltaic silicon materials in low temperature
title_full_unstemmed Application of photovoltaic silicon materials in low temperature
title_sort application of photovoltaic silicon materials in low temperature
publishDate 2010
url http://ndltd.ncl.edu.tw/handle/79075822299312560681
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