The study on channel thickness effects and transportation mechanism establishment for InGaZnO Thin-Film-Transistors
碩士 === 國立交通大學 === 顯示科技研究所 === 98 === The discussion of oxygen flux, annealing and the regulation factor causes the different oxygen content in indium gallium zinc oxygen thin film to promotes the a-IGZO TFT’s quality and because of the research of reliability analysis, the transport mechanism have b...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/36782895163013449290 |