Analysis of Flexible Organic Thin-Film Transistors under Bending Strains

• Main Authors: Chen, Tzung-Da, 陳宗達
• Other Authors: Chen, Fang-Chung
• Format: Others
• Language: zh-TW
• Published: 2010
• Online Access: http://ndltd.ncl.edu.tw/handle/10664551643855492895

碩士 === 國立交通大學 === 顯示科技研究所 === 98 === In this study, we fabricated flexible organic thin-film transistors on stainless steel substrates, and their electrical characteristic were measured under different bending conditions. We found that the electrical characteristic was increased under compressed strain and decreased under tensile strain. From the analysis of the results, we deduced that the variety of intermolecular force change the device characteristic under bending strain states. mechanical strains influence the barrier height between the grains of pentacene thin-films, thereby resulting in the variation of device characteristic.