Oxide-Based Resistive Random Access Memory
碩士 === 國立交通大學 === 顯示科技研究所 === 98 === In this thesis, we demonstrate inorganic resistive random access memory (RRAM) using sputtered SiO2 thin films, and investigate the influences of electrical characteristics of the devices with various post-annealing conditions. The results show that devices with...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/52860599754950649604 |