Oxide-Based Resistive Random Access Memory

• Main Authors: Cheng, You-Wei, 鄭又瑋
• Other Authors: Lee, Po-Tsung
• Format: Others
• Language: en_US
• Published: 2010
• Online Access: http://ndltd.ncl.edu.tw/handle/52860599754950649604

碩士 === 國立交通大學 === 顯示科技研究所 === 98 === In this thesis, we demonstrate inorganic resistive random access memory (RRAM) using sputtered SiO2 thin films, and investigate the influences of electrical characteristics of the devices with various post-annealing conditions. The results show that devices with RTA treatment can exhibit better electrical characteristics, especially in the significant improvement of endurance. We also analyze carrier transport behaviors in the high conductance state of devices and propose carrier transport mechanisms under different RTA treatments. In addition, we fabricate two different structures of organic RRAM: AlOx/Alq3 bi-layer and Alq3/MoO3/Alq3 tri-layer structures. It is found that interface defects at the AlOx/Alq3 interface dominate the resistive switching of organic RRAM using the bi-layer structure, and the high ON/OFF current ratio near 106 is obtained; the switching behavior of organic RRAM using the tri-layer structure originate from carrier confinement barriers produced by the difference of energy bands between the nano-structure MoO3 and Alq3 layers, and this devices exhibit a high ON/OFF current ratio about 104 and provide many write-read-erase-read cycles.