| Summary: | 碩士 === 國立交通大學 === 奈米科技研究所 === 98 === In recent years, a variety of sensors with different sensing mechanisms have been
proposed by many research teams to enhance the sensitivity in very low concentration.
Modern electronic devices especially nanowire devices possess properties of high
surface to volume ratio and high device density in device fabrication so that array of
devices can be easily prepared. In this thesis, suspended N-type and P-type silicon
nanowire devices of Ohmic contacts and Schottky contacts were prepared and
characterized. The nanowire diameter are successfully reduced to ca. 22 nm via
thermal oxidation. Carrier transport mechanisms of Metal/semiconductor Schottky
contacts and Ohmic contacts devices were also evaluated and compared based on their
transconductance. For CMOS compatibility, nickel was chosen to form nickel silicide
and Schottky contacts with silicon. Finally, different charged molecules, NTA and
APTS, were bound onto the surface of device to demonstrate the sensitivities of
different devices. Based on sensitivities and sensing mechanisms of the four devices,
the Schottly contact devices present higher sensitivity. It is believed that the nanowire
devices with Schottky contacts are suitable for future applications.
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