Effect of nitrogen and thermal treatment on resistance random access memory (RRAM) for HfOx film
碩士 === 國立交通大學 === 電機學院微電子奈米科技產業專班 === 98 === In recent years, nonvolatile memory research of person more and more, among them in order to resistive random access memory (RRAM) have attracted a large attention, including simple structure, low power consumption, high operation speed, low operation vol...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/06371486870178594814 |