Effect of nitrogen and thermal treatment on resistance random access memory (RRAM) for HfOx film

• Main Authors: Wu, Tien-Yu, 吳天佑
• Other Authors: Wang, Ta-Hui
• Format: Others
• Language: en_US
• Published: 2009
• Online Access: http://ndltd.ncl.edu.tw/handle/06371486870178594814

碩士 === 國立交通大學 === 電機學院微電子奈米科技產業專班 === 98 === In recent years, nonvolatile memory research of person more and more, among them in order to resistive random access memory (RRAM) have attracted a large attention, including simple structure, low power consumption, high operation speed, low operation voltage, long retention time, high endurance, non-destruvtive readout, and small cell size. Accordingly, RRAM has been proposed to be one candidate of next generation nonvolatile memory. In this thesis, the HfO2 resistive switching device offers a promising potential for high density and low power memory application with the ease of processing integration. First, we would introduce fundamental Current-Voltage characters of the bistable resistive switching behavior. The Pd and Pd/Al was doped top electrical with different treatment by sputtering method, and discussion treatment effect. Finally, we would decline the conduction mechanism of the device and discuss the influence of treatment. We would choose is operation of low-voltage as development component later.