Contact resistance improvement by wet cleaning for Al/Cu metal
碩士 === 國立交通大學 === 工學院碩士在職專班半導體材料與製程設備組 === 98 === Borderless (BDL) vias landing on metal lines were demanded in high-density flash memory devices due to the reduced die size, internal dielectric (IMD) material recess in un-landed via dry etching and the Al-Cu metal line undercut caused by post-etch...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/63613582484772866905 |