The Study of multi-Nanoindentation and Cathodoluminescence measurement on A-axis GaN epilayers mechanical characteristics
碩士 === 國立交通大學 === 機械工程學系 === 98 === The purpose of this study is to investigate the effect of nanomechanical properties and relative cathodoluminescence characteristics on A-plane gallium nitride (GaN) epilayers. In the experiment procedure, the high quality GaN epilayers was synthesized by meta...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/31208268589511217643 |
| Summary: | 碩士 === 國立交通大學 === 機械工程學系 === 98 === The purpose of this study is to investigate the effect of nanomechanical properties and relative cathodoluminescence characteristics on A-plane gallium nitride (GaN) epilayers. In the experiment procedure, the high quality GaN epilayers was synthesized by metal-organic chemical vapor deposition (MOCVD) on prismatic A-planes (1120) of sapphire substrate. Two different loading modes were utilized to observe plastic deformation behavior and the nanomechanical properties of GaN epilayers in nanoindentation process. After that, the surface morphologies and failure mechanism of indentation-induced deformed area were analyzed by using Atomic Force Microscopy (AFM) and cathodoluminescence system, respectively.
The varied elastoplastic deformation behaviors were obtained by using different loading modes which cause different lattice sliding and dislocation nucleation mechanisms in GaN epilayers. Besides, the degradation of peak intensity and shift of peak wavelength were observed from cathodoluminescence analyses. These variations were due to the generation of large dislocations and changed lattice constant through loading process.
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