The Observation and Removement of Damages layer in GaN substrates after CMP

• Main Authors: Chen, Kuei-You, 陳奎佑
• Other Authors: Lee, Wei-I
• Format: Others
• Language: zh-TW
• Published: 2010
• Online Access: http://ndltd.ncl.edu.tw/handle/73570297446902719874

碩士 === 國立交通大學 === 電子物理系所 === 98 === In this work , the major purpose was to study the surface roughness and sub-surface damage of GaN substrates and expect to obtain epi-ready GaN substrate. We studied the surface roughness by atomic force microscope to acquire the optimum parameter of mechanical polish process, then the RMS surface roughness less than 1nm that we done. In the research of the damage, we had to observe the damage by the near band edge intensity and the intensity ratio of the NBE emission to yellow luminescence of photoluminescence (PL). And, the plane view and cross section image of cathodoluminescence (CL) was applied to analysis the surface damages. Furthermore, transmission electron microscope measurement was used to test and verify the phenomenon by the PL and CL measurement; the Inductively Coupled Plasma treatment on the mechanically polished samples effectively removed the polishing-induced damage. And, the subsurface damage could be removed by fine chemical mechanical polish, but the parameter needed to be adjusted. Finally, it was successful to growth the near UV LED on GaN substrate with suitable surface treatment.