Optical Properties of InxGa1-xAs1-ySby/InP material

• Main Authors: Lin, Ju-Hsien, 林儒賢
• Other Authors: Chang, Wen-Hao
• Format: Others
• Language: zh-TW
• Published: 2010
• Online Access: http://ndltd.ncl.edu.tw/handle/84437498553497530305

碩士 === 國立交通大學 === 電子物理系所 === 98 === Band gaps and recombination mechanisms in the InxGa1-xAs1-ySby/InP materials are investigated by photoluminescence (PL), photoreflectance (PR), and time-resolved excitation correlation spectroscopy (TREC). First, we study the recombination lifetimes in heavily Be-doped InxGa1-xAs1-ySby films by TREC measurements. The dependence of electron lifetime on doping concentration can be well described by a relation and the electron lifetimes are longer than InGaAs and GaAsSb at a high doping concentration. From the power-dependent TREC measurements, we demonstrate that the carrier recombination is dominated by the Shockley-Read-Hall process. Second, the band gap bowing and the Varshni empirical parameters of undoped InGaAsSb films are determined by PR spectra. By temperature-dependent PL measurements, stronger carrier localizations and larger Stoke shifts are observed in samples with intermediate compositions.