DESIGN TO ENHANCE TURN-ON UNIFORMITY OF MULTI-FINGER ESD PROTECTION DEVICES
碩士 === 國立交通大學 === 電子工程系所 === 98 === While the process evolution from microscale to nanoscale, the device size is continually scaled down, and so does the gate oxide thickness. The silicide process now is a common procedure to improve the operating speed of CMOS ICs. These are positive to the perform...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/05511861582447460585 |