A study on the application of Al2O3/HfO2 laminate on nonvolatile memory
碩士 === 國立交通大學 === 電子工程系所 === 98 === In this thesis, we proposed an Al2O3/HfO2 nano-laminate deposited by atomic layer deposition (ALD) method as the trapping layer of the flash type non-volatile memory. Both capacitor and thin-film transistor (TFT) structures were prepared. In order to suppress the...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/39889088680341178653 |