Effect of Thermal Treatment on Resistive Random Access Memory (RRAM) of Ni / HfOx / TiN Structure
碩士 === 國立交通大學 === 電子工程系所 === 98 === In this thesis, we used metal-oxide-metal (MOM) structure of nickel (Ni), non-stoichiometric hafnium oxide (HfOx), and titanium nitride (TiN) to demonstrate RRAM characteristics. Voltage-induced resistance switching is repeatedly observed in the Ni/HfOx/TiN device...
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| Format: | Others |
| Language: | en_US |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/52213551713034098329 |