The Study of AlGaN/GaN High Electron Mobility Transistors for High Frequency and High Power Applications
博士 === 國立交通大學 === 材料科學與工程學系 === 98 === AlGaN/GaN high electron mobility transistors (HEMTs) have been fabricated and characterized. To further improve the performance of the HEMTs, Ohmic and Schottky contacts have been extensively re-examined and new approaches are proposed. The effect of the device...
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| Format: | Others |
| Language: | en_US |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/07018620640548250354 |