High-Performance Enhancement-mode AlGaN/GaN HEMTs Utilizing Fluorine Plasma Treatment
碩士 === 國立交通大學 === 材料科學與工程學系 === 98 === Enhancement mode (E-mode) AlGaN/GaN HEMTs utilizing Fluorine plasma treatment is investigated in this study. The Fluorine-plasma technique effectively converted the device from conventional depletion mode (D-mode) into E-mode operation. The threshold voltage of...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/75597381753639395297 |