| Summary: | 碩士 === 國立交通大學 === 材料科學與工程系所 === 98 === IGZO transparent conducting thin films has been successfully fabricated by sol-gel method. With spin-coating deposition technology at ambient enviroment. In comporision with vaccum systems, spin-coating method is very promising technique for producing large scale thin films in cost-effective and less time-consuming way.
In this study, the IGZO precursor solution was prepared by dissolving indium nitrate hydrate, gallium nitrate hydrate, and zinc acetate dehydrate in 2-methoxyethanol and monoethanolamine, and the resultant solution was stirred at 60 ℃ for 4hrs to form the IGZO sol solution. The mole ratio of In : Ga : Zn in IGZO sol solution was varied between 1:1:2, 3:1:2,and 5:1:2. The IGZO sol solution was aged 24 hrs at room temperature to form the IGZO gel solution.
After we fabricated IGZO thin film by spin coating, we improve optical and electrical properties the IGZO thin films by using different working temperature, atmosphere and ionic doping ratio. We have successfully produced lowest sheet resistance 462.06 Ω /□ and optical transmission 85% IGZO thin films with two step heat treatment.
At first, the films were annealed at 400 ℃ for 1 hr in argon environment. Then, the films were annealed at 350 ℃ for 1 hr in (10%H2+90%N2) environment. The result of experiment shows that the conductivity of IGZO films decrease and the optical transmission of IGZO films is promoted by exactly doping ionic ratio and using ideal working temperature.
|
|---|
