Phase Behavior and Thin-Film Properties for Solution-Processed Field-Effect Transistor Based on Liquid-Crystalline Semiconductor Oligothiophenes

• Main Authors: Yi-Chan Tasi, 蔡易展
• Other Authors: Ming-Yu Kuo
• Format: Others
• Language: zh-TW
• Published: 2010
• Online Access: http://ndltd.ncl.edu.tw/handle/99562959154036285179

碩士 === 國立暨南國際大學 === 應用化學系 === 98 === In view of the increasing popularity of Organic Field Effect Transistor（OFET）. In order to implement the industrialization process, therefore, the solution process becomes an important of development goals. In this study, we used highly-soluble oligothiophene derivatives as organic active layer. These thin film were deposited by vacuum evaporation and solution process. In the vacuum evaporation process, we previous used to modify substrate surface by self-assembled monolayer（SAM）, octadecyltrichlorosilane（ODTS） and Hexamethyldisilazane（HMDS）. Then, rubbing to further improve the arrangement of SAM. The results of this series of results to that NTETB has the best electrical properties, the carrier mobility of up to 3.51×10-2 cm2/Vs and on/off current ratio is 4.04×102. Then, by atomic force microscopy and X-ray diffraction to investigate the relationship between film morphology, molecular arrangement and electrical property. Also because NTETB have the best performance, so a precursor of solution process in this study. After optimizing the conditions of the thin film, the carrier mobility of up to 5.79×10-2 cm2/Vs, but the leakage current was found. Then, using Differential Scanning Calorimeter（DSC） to measure the physical properties and through various heat treatment process. Finally, we analyze the thin film phase change process by polarized optical microscope and X-ray diffraction.